Master in Microelectronics Technology and Manufacturing Management
Module 2.1 - Semiconductor Devices
Detail
2.1.1 - Introduction to Semiconductor Physics
2.1.2 - Bipolar Device Physics
2.1.4 - Electrical Characterization in Microelectronics
2.1.1 - Introduction to Semiconductor Physics
Program focus
This 12-hour course reviews semiconductor properties, and is used as a basis
for understanding and calculating device characteristics. Crystal structure,
semiconductors, energy band, carrier distribution, and transport properties
are presented with emphasis on silicon. A compilation of the most accurate
values for this semiconductor is given in the illustrations.
Benefits
At the end of the course, you will be more effective in understanding and
calculating characteristics for basic devices including diodes, transistors,
and MOS capacitance.
2.1.2 - Bipolar Device Physics
Program focus
This six-hour course covers calculation of the current (ideal and non ideal)
in a PN junctions and basic description and modelling of bipolar transistors.
It first looks at the ideal current in a PN junction (Schockley law) and
then describes all non-ideal effects (short diode, recombination/generation,
high injection, series resistance, breakdown). It is followed by a description
of bipolar transistors and their operating mode, a basic modelling of DC
currents through the BJT and finally a short overview of the main issues
and advances of bipolar technology (SiGe, HBT…).
Benefits
At the end of this course, you will know the basics of bipolar integrated
circuit processing.
2.1.3 - Physics of Metal Oxide Semiconductor (MOS) Devices and of the Field Effect Transistor (MOSFET)
Program focus
This 12-hour course provides an overview including some basic principles
from physics, theory of operation for MOS–based devices and a first
electrical model used for the MOSFET. It first focuses on the MOS capacitor
and the various regimes of the structure, explicating the capacitance-voltage
characteristics of the ideal MOS diode, and develops the calculation of
the threshold voltage of the MOSFET. Then, a first electrical model of the
MOSFET based on the gradual channel approximation is presented. The physical
limitations and advanced effects in MOSFETs (including associated electrical
problems) are finally described.
Benefits
At the end of this course, you will have understood the MOS and MOSFET operation
and got some physical insight in the meaning of physical and electrical
parameters used in CAD models.
2.1.4 - Electrical Characterization in Microelectronics
Program focus
This 6-hour course is a presentation of the main basic experimental electrical
measurements used to characterize semiconductors and devices. The first
part deals with the measurement methods of conduction parameters, such as
resistivity and carrier concentration. The second part focuses on the C(V)
technique, widely used both for parameter extraction and for substrate,
interface or oxide defects characterization in MOS structures. Finally,
lifetime measurement techniques are presented.
Benefits
At the end of this course, you will know basic semiconductor, oxide and
MOS device electrical measurement techniques currently used in as characterization
tools in the semiconductor industry.
2.1.5 - Electrical Device Modeling
Program focus
This 12-hour course establishes the electrical models used for bipolar (PN
junction & Bipolar Junction Transistor BJT) and MOS (capacitor and MOSFET)
devices. Starting from basic knowledge in physics of semiconductors and
the description of the structure, it will establish the most frequently
used ideal and non-ideal laws used in these models, and will discuss DC
and AC representations. Finally, the SPICE representation of these models
will be presented.
Benefits
At the end of this course, you will understand the physical meaning and
implications of the terms involved in the electrical models used in simulators
and be able to estimate their influence on the characteristics of the device.
You will be able to link physical and technological parameters and their
electrical consequences.
2.1.6 - Submicron Device
Program focus
The 12 hours course deals with the scaling of submicron MOSFET’s.
After an introduction to the short channel effects, the peculiar features
of the carrier transport in scaled MOSFET’s will be highlighted and
quantitatively assessed. The historical evolution of the MOSFET scaling
is reviewed. Starting from the first attempts to give a theoretical basis
to the scaling strategy the most important steps of the device evolution
will be discussed. As the MOSFET enters in the deep submicron regime, quantum
effects become relevant and have direct impact on the device performance.
They are addressed and the structures of advanced devices will be described.
The last section is then devoted to the operation and performance of ultimate
decanano MOSFET’s
Benefits
- Developing quantitative understanding of advanced MOSFET’s performance
- Appreciate the novel trends in deca-nanometer CMOS technologies.